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| SUM110N06-05L New Product Vishay Siliconix N-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 FEATURES rDS(on) (W) ID (A) 110 a 0.0052 @ VGS = 10 V 0.0072 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D New Low Thermal Resistance Package APPLICATIONS D Automotive and Industrial D TO-263 G G DS S Top View Ordering Information: SUM110N06-05L SUM110N06-05L--E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C d TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 60 "20 110a 82a 300 75 280 230c 3.75 -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient--PCB Mountd Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 72006 S-32618--Rev. B, 29-Dec-03 www.vishay.com Symbol RthJA RthJC Limit 40 0.65 Unit _C/W 1 SUM110N06-05L Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currenta IDSS ID(on) VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V, TJ = 175_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 20 A VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 120 0.0044 0.0059 0.0052 0.0072 0.0085 0.011 S W 60 1 3 "100 1 50 250 A m mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 30 V, RL = 0.27 W ID ^ 110 A, VGEN = 10 V, Rg = 2.5 W VDS = 30 V, VGS = 10 V, ID = 110 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 4300 770 365 80 19 20 15 20 45 15 25 30 70 25 ns 120 nC pF Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 110 A, VGS = 0 V IF = 110 A, di/dt = 100 A/ms A A/ 1.1 75 2.5 0.095 110 300 1.5 125 5 0.31 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72006 S-32618--Rev. B, 29-Dec-03 SUM110N06-05L New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 10 thru 5 V 200 I D - Drain Current (A) I D - Drain Current (A) 200 250 Vishay Siliconix Transfer Characteristics 150 4V 100 150 100 TC = 125_C 50 25_C -55_C 0 50 3V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Transconductance 200 TC = -55_C 25_C r DS(on) - On-Resistance ( W ) 160 g fs - Transconductance (S) 0.008 0.010 On-Resistance vs. Drain Current 120 125_C 0.006 VGS = 4.5 V VGS = 10 V 80 0.004 40 0.002 0 0 15 30 45 60 75 90 0.000 0 20 40 60 80 100 120 ID - Drain Current (A) ID - Drain Current (A) 6000 5000 Capacitance 20 VGS = 30 V ID = 110 A Gate Charge V GS - Gate-to-Source Voltage (V) Ciss C - Capacitance (pF) 4000 3000 2000 Coss 1000 0 0 Crss 10 20 30 40 50 60 16 12 8 4 0 0 20 40 60 80 100 120 140 160 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) www.vishay.com Document Number: 72006 S-32618--Rev. B, 29-Dec-03 3 SUM110N06-05L Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2.5 On-Resistance vs. Junction Temperature VGS = 10 V ID = 110 A I S - Source Current (A) 100 Source-Drain Diode Forward Voltage r DS(on) - On-Resistance (W) (Normalized) 2.0 1.5 TJ = 150_C 10 TJ = 25_C 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 175 1 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Avalanche Current vs. Time 1000 80 Drain Source Breakdown vs. Junction Temperature ID = 10 m A 100 V(BR)DSS (V) I Dav (a) 75 10 IAV (A) @ TJ = 25_C 70 1 65 IAV (A) @ TJ = 150_C 60 -50 0.1 0.00001 0.0001 0.001 0.01 0.1 1 tin (Sec) -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 72006 S-32618--Rev. B, 29-Dec-03 SUM110N06-05L New Product THERMAL RATINGS Maximum Drain Current vs. Case Temperature 120 100 100 I D - Drain Current (A) 80 60 40 20 0 0 25 50 75 100 125 150 175 TC - Ambient Temperature (_C) 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) I D - Drain Current (A) Vishay Siliconix Safe Operating Area 1000 Limited by rDS(on) 10 ms 100 ms 10 1 ms 10 ms 100 ms dc 1 TC = 25_C Single Pulse 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0.05 Normalized Thermal Transient Impedance, Junction-to-Case 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (sec) Document Number: 72006 S-32618--Rev. B, 29-Dec-03 www.vishay.com 5 |
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